IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:-
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 49A |
| Drain-Source Resistance (Rds On) | 0.0175Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 94W |

![IRFZ44N Original [ Infineon Brand ] MOSFET [ 10 Pieces Pack ]](https://tufonlinestore.com/wp-content/uploads/2021/12/z44-infineon-scaled.webp)

![K100E10N1 Mosfet New & original Toshiba Brand [100V 100A ] [ 10 Pieces Pack ]](https://tufonlinestore.com/wp-content/uploads/2023/02/K100e10-scaled-300x225.webp)
![110N08 Original New MOSFET 110A 80V [ 10 Pieces Pack ]](https://tufonlinestore.com/wp-content/uploads/2024/09/110n08-new-mosfet-300x225.webp)
![IRFB7440 Original MOSFET 120A [ For 24 volt Sine wave ] IRFB7440PBF, [ 10 Pieces Pack ]](https://tufonlinestore.com/wp-content/uploads/2021/07/7440-scaled-300x225.webp)
Reviews
There are no reviews yet.