IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:-
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 49A |
| Drain-Source Resistance (Rds On) | 0.0175Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 94W |
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