Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 110A |
| Drain-Source Resistance (Rds On) | 8mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 146 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 200W |
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