Key Features:
- Type: NPN BJT (Bipolar Junction Transistor).
- Package: SMD SOT-23.
- Collector-Emitter Voltage (Vceo): 25V.
- Collector Current (Ic): 500mA (maximum).
- Power Dissipation: 300mW.
- Typical Applications: Low-power amplifiers, switching circuits, and LED drivers.
- DC Gain (hFE): Can reach 400, but typically around 110.
Detailed Specifications:
- Collector-Base Voltage (Vcbo): 40V.
- Emitter-Base Voltage (Vebo): 5V.
- Maximum Collector Power Dissipation (Pc): 1.3W (at 25°C).
- Transition Frequency (ft): 200MHz.
- Operating Temperature: -55°C to +150°C.
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