- ype Designator: 18N50
- Type of Transistor: MOSFET
- Type of Control Channel: N-Channel
Absolute Maximum Ratings
- Pd ⓘ – Maximum Power Dissipation: 277 W
- |Vds|ⓘ – Maximum Drain-Source Voltage: 500 V
- |Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
- |Id| ⓘ – Maximum Drain Current: 18 A
- Tj ⓘ – Maximum Junction Temperature: 150 °C
Electrical Characteristics
- |VGSth|ⓘ – Maximum Gate-Threshold Voltage: 4 V
- Qg ⓘ – Total Gate Charge: 45 nC
- tr ⓘ – Rise Time: 165 nS
- Cossⓘ – Output Capacitance: 330 pF
- RDSonⓘ – Maximum Drain-Source On-State Resistance: 0.24 Ohm


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