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Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 90A |
| Drain-Source Resistance (Rds On) | 0.0065Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 47 nC |
| Operating Temperature Range | -65 – 175°C |
| Power Dissipation (Pd) | 150W |
P90NF03L application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Features:-
• Optimal RDS(on) x Qg trade-off
• Conduction losses reduced
• Switching losses reduced
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